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In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation Forces desingners to make choices in the desing of RF circuits. In this paper the aim is to design and simulate a single stage LNA circuit with high gain and low noise using MESFET for frequency range of 5 GHz to 6 GHz. The desing simulation process is down using Advance Design System (ADS). A single stage LNA has successfully designed with 15.83 dB forward gain and 1.26 dB noise figure in frequency of 5.3 GHz. Also the designed LNA should be working stably In a frequency range of 5 GHz to 6 GHz.
Designing amplifiers for a minimum noise figure then becomes simply a matter of setting the optimum condition for a particular transistor. Based on S parameters of the transistor and certain performance requirements, a systematic procedure is developed for the design of the LNA. In LNA design, the most important factors are low noise, moderate gain, matching and stability.
source:http://www.waset.org/
Tags : low noise amplifier, radio frequency rf, rf circuits, amplifier circuit, microwave receiver, rf circuit, s parameters, moderate gain, waset, forward gain, noise figure, optimum condition, mesfet, advance design, power consumption
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