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A monolithic integrated radio-frequency power amplifier for the 5.8 GHz band has been realized in a 25 GHz-fT Si-bipolar production technology (B6HF). The 2-stage push-pull type power amplifier uses a planar on-chip transformer as input-balun and for interstage matching. This work presents circuit design and measurement results of an on-chip transformer coupled 2 stage push-pull type amplifier using cascode stages to improve the gain. CIRCUIT DESIGN Fig. 1. shows the schematic diagram of the power amplifier. The on-chip transformer X1 acts as balun as well as input matching network. There are several outstanding advantages due to the transformer at the input: X1 forms a parallel resonant device using two MOS capacitors at the input side connected in anti-series. The turn-ratio of X1 is N = 3:1. EXPERIMENTAL RESULTS Fig. 2. shows the chip photograph of the power amplifier. The chip size is 1.56 x 1 mm 2 . The chip is fabricated in a standard 25 GHz-f. shows the schematic diagram of the power amplifier test-board. The input of the amplifier is connected via a 50 ? micro-strip line to the input signal.
Tags:radio frequency power, bipolar technology, transformer x1, power amplifier, gain circuit
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